4DS has demonstrated Interface Switching ReRAM cells at a 40 nanometer geometry, representing significant progress in scalability and yield. This 40nm geometry, demonstrated by 4DS, is smaller than ...
Memory company 4DS has hailed its development of 40nm ReRAM as a milestone on the path to replacing 3D NAND flash memory. Whereas flash memory uses electrical charge, ReRAM uses resistance to store ...
The ASX tech share has been working to develop an Interface Switching ReRAM specifically developed for Storage Class Memory applications. 4DS Memory share price crashes 65% Unexpected problems were ...
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